Electronic devices and materials Books

Five years have passed since the breakthrough in the critical temperature for superconductors. During this period, many superconducting materials have been discovered and developed, and our knowledge of the physical and other...

This book is based on the updated versions of a lively mixture of tutorials, topical papers, and scientific and technological contributions collected from the International URSI Symposium on Environmental and Space ...

Japanese semiconductor firms are well known for obtaining dynamics in a short period of time and achieving even global leadership. A significant portion of their success are attributable to cooperative interfirm relations and...

This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique...

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.  The author...

This book presents an investigation of the anomalous and topological Hall effects in some itinerant ferromagnets and helimagnets by measurements of Hall effects driven by electrical or heat current. New clarifications are provided for spin-dependent Hall...

In this thesis, the author investigates hidden-order phase transition at T0 = 17.5 K in the heavy-fermion URu2Si2. The four-fold rotational symmetry breaking in the hidden order phase, which imposes a strong constraint on the theoretical model, is...

In this thesis the author presents the results of extensive spectroscopy experiments beyond the bounds of each transition element to clarify the origins of characteristic spectral features and charge dynamics in charge-spin-orbital coupled phenomena in...

In this book the author presents two important findings revealed by high-precision magnetic penetration depth measurements in iron-based superconductors which exhibit high-transition temperature superconductivity up to 55 K: one is the fact that the...

This thesis describes a novel and robust way of deriving a Hamiltonian of the interacting boson model based on microscopic nuclear energy density functional theory. Based on the fact that the multi-nucleon induced surface deformation of finite nucleus...

It was about 1985 when both of the authors started their work using multigrid methods for process simulation problems. This happened in­ dependent from each other, with a completely different background and different intentions...

Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic ...

Introduction. - Electron transport in the 3D k-space: The Boltzmann transport equation and its projection onto spherical harmonics. - Device simulation. - Band structure and scattering mechanisms. - Results. - Transport in a quasi 2D hole gas: Coordinate...

A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field...

This concise primer on photovoltaic solar energy conversion invites readers to reflect on the conversion of solar light into energy at the most fundamental level and encourages newcomers to the field to help find meaningful answers on how photovoltaic...

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they...

Microsystems applications (MST) in automobiles have become commonplace: they enable the introduction of a series of new functions and at the same time the replacement of existing technologies offering improved performance and...

On the current status of research activity, providing new information on the applications of SQUIDs, including magnetocardiography, immunoassays, and laser-SQUID microscopes, all of which are close to being commercially...

This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si:H), nano porous titanium dioxide, and the fullerene C60. Despite the fundamental structural...

The origin of the development of integrated circuits up to VLSI is found in the invention of the transistor, which made it possible to achieve the ac­ tion of a vacuum tube in a semiconducting solid. The structure of the tran­...

The papers in this book were presented at the CMU Conference on VLSI Systems and Computations, held October 19-21, 1981 in Pittsburgh, Pennsylvania. The conference was organized by the Computer Science Department, ...

The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham...

Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in...

The art of transforming a circuit idea into a chip has changed permanently. Formerly, the electrical, physical and geometrical tasks were predominant. Later, mainly net lists of gates had to be constructed. Nowadays, hardware...

The expansion of the application of ferroelectric crystals in engineering as well as of a number of fundamental problems of solid-state physics, which have not yet been solved and which bear a direct relation to ferro ...

This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of...

This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8 by vacuum, ultra-violet, laser-based, angle-resolved photoemission spectroscopy (ARPES). A new form of electron coupling has been identified in Bi2212, which...

In conventional metals, various transport coefficients are scaled according to the quasiparticle relaxation time, \tau, which implies that the relaxation time approximation (RTA) holds well. However, such a simple scaling does not hold in many strongly...

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of...

The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical...

In recent years, remarkable progress in the fabrication of novel mesoscopic devices has produced a revival of interest in quantum Hall physics. New types of measurements, more precise and efficient than ever, have made it possible to focus closely on...

One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that...

The book is an expanded autobiography of the famous theoretical physicist Isaak Khalatnikov. He worked together with L.D. Landau at the Institute for Physical Problems lead by P.L. Kapitza. He is the co-author of L.D. Landau in a number of important...

This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires,...

This thesis investigates the structure and behaviour of entanglement, the purely quantum mechanical part of correlations, in many-body systems, employing both numerical and analytical techniques at the interface of condensed matter theory and quantum...

At extremely low temperatures, clouds of bosonic atoms form what is known as a Bose-Einstein condensate. Recently, it has become clear that many different types of condensates -- so called fragmented condensates -- exist. In order to tell whether...

Density functional theory (DFT) has become the standard workhorse for quantum mechanical simulations as it offers a good compromise between accuracy and computational cost. However, there are many important systems for which DFT performs very poorly,...

"Semiconductor-On-Insulator Materials for NanoElectronics Applications" is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator...

The problem of conventional, low-temperature superconductivity has been regarded as solved since the seminal work of Bardeen, Cooper, and Schrieffer (BCS) more than 50 years ago. However, the theory does not allow accurate predictions of some of the most...

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different...

For emerging energy saving technologies superconducting materials with superior performance are needed. Such materials can be developed by manipulating the "elementary building blocks" through nanostructuring. For superconductivity the "elementary...

The transmission speed of data communication systems is forecast to increase exponentially over the next decade. Development of both Si-based high-speed drivers as well as III-V-semiconductor-based high-speed vertical cavity surface emitting lasers...