The evolution of semiconductor has been growing sincethe first transistor was invented in 1900. Theindustry today is a very important market andworldwide sales for the past years has been growingrapidly and is now a multi-billion industry. In theindustry, the main govern by the "Moore's rule". Thislead to the industry answer by the creation ofthe International Roadmap for Semiconductor. In thepast century, semiconductor transistors have movedrapidly and technology nodes have been shrinkingevery two years following Moore's rule. Materialshave been moving from bulk silicon to Silicon-on-Insulator wafers. In the past few years, technologists have come to a point where they have recognized that this shrinking phenomenon and high demand for the capability of the transistors in the semiconductor industry is coming to a halt if no new design or technology can be found. In order toovercome this halt, various new ideas have beenproposed; among them the use of asymmetrical channeldoping, multiple-gate MOSFETs and Silicon-on-NothingMOSFETs. In this work, an overview of these ideasare presented via means of simulations andmeasurements where possible.
Simulation, Fabrication and Characterization of Advanced MOSFETs
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The evolution of semiconductor has been growing sincethe first transistor was invented in 1900. Theindustry today is a very important market andworldwide sales for the past years has been growingrapidly and is now a multi-billion industry. In theindustry, the main govern by the "Moore's rule". Thislead to the industry answer by the creation ofthe International Roadmap for Semiconductor. In thepast century, semiconductor transistors have movedrapidly and technology nodes have been shrinkingevery two years following Moore's rule. Materialshave been moving from bulk silicon to Silicon-on-Insulator wafers. In the past few years, technologists have come to a point where they have recognized that this shrinking phenomenon and high demand for the capability of the transistors in the semiconductor industry is coming to a halt if no new design or technology can be found. In order toovercome this halt, various new ideas have beenproposed; among them the use of asymmetrical channeldoping, multiple-gate MOSFETs and Silicon-on-NothingMOSFETs. In this work, an overview of these ideasare presented via means of simulations andmeasurements where possible.
An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past...
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and...
Comprehensive reference on the fundamental principles and basic physics dictating metal?oxide?semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides...
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