Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
The Brown Boveri Symposia are by now part of firmly established tradition. This is the seventh event in a series which was initiated shortly afer Corporate Research was established as a separate...
Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate...
This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power...
Modern Power Devices: Technology for High Power Devices (T. Ohmi). The MosControlled Thyristor and its Limits (F. Bauer). High Power Reverse Conducting GTO (P. Streit). Review of Power Device ...
Power Semiconductor Devices Theory and Applications Vít???zslav Benda Czech Technical University, Prague, Czech Republic John Gowar Duncan A. Grant University of Bristol, UK Recent advances in...
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