Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explores the latest findings in the fundamental physics of narrow gap materials and quantum heterostructures as well as device physics, including mid- and far-infrared lasers, detectors, and spintronic devices. This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges. Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.
Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explores the latest findings in the fundamental physics of narrow gap materials and quantum heterostructures as well as device physics, including mid- and far-infrared lasers, detectors, and spintronic devices. This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges. Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review...
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps...
This report uses a broad range of indicators to assess the individual and collective development progress made by the Association of Southeast Asian Nations (ASEAN).Building on a previous study...
This book provides effective strategies that can be used to improve academic achievement and well-being of minority students. It examines, collectively, three cultural groups on themes related to...
Daniel Sobel's Narrowing the Attainment Gap examines the real issues behind the attainment gap. Most school leaders do not actually know how spending money in schools can impact sociological and...
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