Continuing to scale down the transistor size makesthe adoption of high-k gate dielectrics and metalelectrodes necessary. However, there are still a lotof problems with high-k transistors such asFermi-level pinning (FLP), which affects flatbandvoltage (Vfb)and threshold voltages (Vth) directly.This book summarizes three FLP mechanisms in gatestacks with high-k dielectrics and metal electrodes:a dipole formation through (1) the mechanism ofoxygen vacancy formation in a high-k dielectriclayer; (2) the hybridization between a metal gate anda high-k dielectric layer; and (3) the interactionbetween an interfacial SiO2 layer and a high-kdielectric layer. This book focuses on the study ofFLP and dipoles induced by capping a thin lanthanideoxide layer on a gate stack with a Hf-based high-kdielectric. By examining Vfb shifts in speciallydesigned gate stacks, it is concluded that thenegative Vfb shift is due to a dipole formation atthe interface between the interfacial SiO2 layer anda lanthanide silicate layer. The Vfb shifts by othertwo FLP mechanisms are also studied. The book is veryuseful for those who are interested in FLP and Vthtuning in high-k transistors.
Gate Stacks with High-k Dielectrics and Metal Electrodes
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Continuing to scale down the transistor size makesthe adoption of high-k gate dielectrics and metalelectrodes necessary. However, there are still a lotof problems with high-k transistors such asFermi-level pinning (FLP), which affects flatbandvoltage (Vfb)and threshold voltages (Vth) directly.This book summarizes three FLP mechanisms in gatestacks with high-k dielectrics and metal electrodes:a dipole formation through (1) the mechanism ofoxygen vacancy formation in a high-k dielectriclayer; (2) the hybridization between a metal gate anda high-k dielectric layer; and (3) the interactionbetween an interfacial SiO2 layer and a high-kdielectric layer. This book focuses on the study ofFLP and dipoles induced by capping a thin lanthanideoxide layer on a gate stack with a Hf-based high-kdielectric. By examining Vfb shifts in speciallydesigned gate stacks, it is concluded that thenegative Vfb shift is due to a dipole formation atthe interface between the interfacial SiO2 layer anda lanthanide silicate layer. The Vfb shifts by othertwo FLP mechanisms are also studied. The book is veryuseful for those who are interested in FLP and Vthtuning in high-k transistors.
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for...
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and...
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers,...
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