Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges.
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text:
Describes different techniques used to grow silicon single crystals
Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication
Reviews different methods to evaluate silicon wafers to determine suitability for device applications
Analyzes silicon wafers in terms of resistivity and impurity concentration mapping
Examines the effect of intentional and unintentional impurities
Explores the defects found in regular silicon-crystal lattice
Discusses silicon wafer preparation for VLSI and ULSI processing
Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
RRP:
$160.00
Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges.
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text:
Describes different techniques used to grow silicon single crystals
Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication
Reviews different methods to evaluate silicon wafers to determine suitability for device applications
Analyzes silicon wafers in terms of resistivity and impurity concentration mapping
Examines the effect of intentional and unintentional impurities
Explores the defects found in regular silicon-crystal lattice
Discusses silicon wafer preparation for VLSI and ULSI processing
Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
This volume contains a collection of papers presented at the NATO Advanced Study Institute on ·Testing and Diagnosis of VLSI and ULSI" held at Villa Olmo, Como (Italy) June 22 -July 3,1987. High...
Feedstock.- Czochralski Silicon Crystal Growth for Photovoltaic Applications.- Floating Zone Crystal Growth.- Crystallization of Silicon by a Directional Solidification Method.- Mechanism of Dendrite...
Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the...
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