Trending Bestseller

Analysis and Simulation of Heterostructure Devices

No reviews yet Write a Review
Hardback
18 December 2003
$323.20
Ships in 3-5 business days

Delivery estimate

Hurry up! Current stock:

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

You Can Find This Title In

    Product Details
    ISBN-13
    9783211405376
    Author
    Vassil Palankovski
    Publisher
    Springer Nature B.V.
    Published
    18 December 2003
    Format
    Hardback

    This product hasn't received any reviews yet. Be the first to review this product!

    $323.20
    Ships in 3-5 business days

    Delivery estimate

    Hurry up! Current stock:

    Analysis and Simulation of Heterostructure Devices

    $323.20

    Description

    The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

    You Can Find This Title In

      This Title Is Categorised As